Power feeding mechanism and method for controlling temperature of a stage

ABSTRACT

A heater power feeding mechanism is provided that divides a stage on which a substrate is placed into zones by using a plurality of heaters and can control a temperature of each of the zones. The heater power feeding mechanism includes a plurality of sets of heater terminals connected to any of the plurality of heaters by a segment unit when a set of the heater terminals is made one segment, a heater interconnection, and an interconnection structure configured to connect at least any of the plurality sets of the heater terminals with each other by using the heater interconnection by the segment unit.

CROSS-REFERENCE TO RELATED APPLICATION

The present application is a continuation of patent application Ser. No.15/300,342 filed on Sep. 29, 2016, which has effectively entered under35 U.S.C. 371 (c) the national stage from the PCT Application No.PCT/JP2015/062961 on Apr. 30, 2015, which is based on and claimspriority to Japanese Priority Application No. 2014-098569 filed on May12, 2014, the entire contents of which are hereby incorporated herein byreference.

TECHNICAL FIELD

The present invention relates to a power feeding mechanism and a methodfor controlling temperature of a stage.

BACKGROUND ART

In semiconductor manufacturing apparatuses that finely process asemiconductor wafer (which is referred to as a “wafer” hereinafter) byan etching and the like, a temperature of a stage on which a wafer isplaced has an impact on an effect of the process such as an etchingrate. Therefore, embedding a heater in the stage and controlling atemperature of the stage by heating the heater are proposed. Forexample, Patent Document 1 discloses a device for controlling atemperature of an electrostatic chuck by equalizing an amount of heatgeneration of the electrostatic chuck by using external resistance inorder to remedy the unevenness of surface temperature associated withunitization of the electrostatic chuck.

Moreover, in the temperature control of the electrostatic chuck,embedding a plurality of heaters inside the electrostatic chuck isproposed. In this case, by dividing the stage into zones for each heaterand performing “multi-zone control” in which the temperature of thestage is controlled for each zone, the uniformity of the wafertemperature across the surface of the wafer on the stage can beimproved.

PRIOR ART DOCUMENTS Patent Documents Patent Document 1: JapaneseLaid-Open Patent Application Publication No. 2003-51433 SUMMARY OF THEINVENTION Problem to be Solved by the Invention

In the meantime, distribution of the generated plasma varies dependingon the properties of a plasma processing apparatus, process conditionsor the like. Accordingly, the zone configuration is preferred to bevariably controlled depending on the distribution of plasma in order toenhance the uniformity across the surface of the stage.

For example, when the distribution of plasma is likely to be uniforminside the stage and is likely to be non-uniform outside the stage, theuniformity across the surface of the stage can be enhanced bycontrolling the zone configuration (i.e., arrangement of each of thezones) so that the inside zone becomes wide and the outside zone becomesnarrow. In contrast, when the distribution of plasma is likely to beuniform outside the stage, and is likely to be non-uniform inside thestage, it is preferable to change the zone configuration so that theoutside zone becomes wide and the inside zone becomes narrow.

However, in order to change the zone configuration, the arrangement ofthe plurality of heaters embedded in the electrostatic chuck needs to bechanged. Moreover, to change the arrangement of the plurality ofheaters, a ceramic sintered body containing the plurality of heatersformed at positions depending on a desired zone configuration needs tobe newly produced.

In response to the above issue, according to an aspect, it is intendedto variably control the zone configuration in controlling a temperatureof a stage for each zone.

Means for Solving the Problem

To solve the above issue, according to an embodiment of the presentinvention, there is provided a heater power feeding mechanism configuredto divide a stage on which a substrate is placed into zones by using aplurality of heaters and to be able to control a temperature of each ofthe zones. The heater power feeding mechanism includes a plurality ofsets of heater terminals connected to any of the plurality of heaters bya segment unit when a set of the heater terminals is made one segment, aheater interconnection, and an interconnection structure configured toconnect at least any of the plurality sets of the heater terminals witheach other by using the heater interconnection by the segment unit.

Advantageous Effect of the Invention

According to an embodiment of the present invention, a zoneconfiguration in controlling a temperature of a stage for each zone canbe variably controlled.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a longitudinal cross-sectional view of an etching apparatusaccording to an embodiment;

FIG. 2A is a diagram illustrating an example of a heater power feedingmechanism according to an embodiment;

FIG. 2B is a diagram illustrating an example of a heater power feedingmechanism according to an embodiment;

FIG. 3A is a diagram illustrating an example of a heater terminal and apower-feeding-part cover structure according to an embodiment;

FIG. 3B is a diagram illustrating an example of a heater terminal and apower-feeding-part cover structure according to an embodiment;

FIG. 4A illustrates a detail of an interconnection structure of a heaterpower feeding mechanism according to an embodiment;

FIG. 4B illustrates a detail of an interconnection structure of a heaterpower feeding mechanism according to an embodiment;

FIG. 5A is a diagram illustrating an example of a zone configurationaccording to an embodiment (in the case of a CCP);

FIG. 5B is a diagram illustrating an example of a zone configurationaccording to an embodiment (in the case of a radial line slot antenna);

FIG. 6 is a flowchart illustrating an example of a method forcontrolling temperature of a stage according to an embodiment; and

FIG. 7 is a table illustrating an example of a zone configuration foreach apparatus according to an embodiment.

EMBODIMENTS FOR IMPLEMENTING THE INVENTION

In the following, embodiments of the present invention are describedwith reference to the accompanying drawings. Note that elements havingsubstantially the same functions or features may be given the samereference numerals and overlapping descriptions thereof may be omitted.

[Overall Configuration of Plasma Processing Apparatus]

To begin with, an overall configuration of a plasma processing apparatus1 according to an embodiment of the present invention is described belowwith reference to FIG. 1. FIG. 1 illustrates a longitudinal crosssection of the plasma processing apparatus according to the embodimentof the present invention. In the present embodiment, a capacitivelycoupled type plasma etching apparatus is cited as an example of theplasma processing apparatus 1. The plasma processing apparatus 1includes a cylindrical chamber (process container) 10 made of, forexample, aluminum whose surface is alumited (anodized). The chamber 10is grounded, and a plasma process such as an etching is performed on awafer W inside a process chamber.

A stage 12 on which the wafer W is to be placed is provided in thechamber 10. The stage 12 includes an electrostatic chuck 40 and aholding plate 13 that holds the electrostatic chuck 40. The holdingplate 13 is made of an insulating member such as resin. Aninterconnection structure 93 such as a heater interconnection isprovided on a lower surface of the holding plate 13. The holding plate13 is supported by a support 15 via an insulating holding part 14. Thus,the stage is fixed to the inside of the chamber 10.

The electrostatic chuck 40 to hold a wafer W thereon by an electrostaticattracting force is provided on a top surface of the stage 12. Theelectrostatic chuck 40 is formed by sandwiching an electrode 40 a madeof a conductive film between a pair of insulting layers 40 b (orinsulating sheets), and a direct-current voltage source 42 is connectedto the electrode 40 a through a switch 43. The electrostatic chuck 40attracts and holds the wafer W on the electrostatic chuck by Coulomb'sforce by a voltage from the direct-current voltage source 42. A focusring 18 made of, for example, silicon or quartz, is disposed in aperiphery of the electrostatic chuck 40 to improve uniformity of theetching across a surface of the wafer W.

A first high frequency power source 31 for plasma excitation isconnected to the stage 12 through a matching box 33, and a second highfrequency power source 32 for attracting ions toward the wafer W isconnected to the stage 12 through a matching box 34. For example, thefirst high frequency power source 31 supplies first high frequency powerwith a frequency of, for example, 60 MHz to the stage 12, which ispreferable to generate plasma in the chamber 10. The second highfrequency power source 32 supplies second high frequency power with arelatively low frequency of, for example, 0.8 MHz to the stage 12, whichis preferable to attract ions in the plasma toward the wafer W on thestage 12. Thus, the stage 12 receives the wafer W thereon and has afunction of a lower electrode.

Heaters 75 a, 75 b, 75 c, 75 d and 75 e (which are also collectivelyreferred to as “heaters 75”) are embedded in the electrostatic chuck 40.The heaters 75 may be attached to the back surface of the electrostaticchuck 40 instead of being embedded in the electrostatic chuck 40. Thenumber of the heaters 75 may be any number as long as the number isplural.

The heaters 75 are connected to power-feeding-part cover structures 76through interconnections of the interconnection structure 93 to thepower-feeding-part cover structures 76. The power-feeding-part powerstructures 76 are connected to heater filters 77 a, 77 b, 77 c, 77 d, 77e and 77 f (which are also collectively referred to as “heater filters77” hereinafter). The heater filters 77 are, for example, formed ofcoils, and protect an AC power source 44 by removing high frequencypower supplied from the first high frequency power source 31 and thesecond high frequency power source 32.

The power-feeding-part cover structures 76 and the heater filters 77 arearranged at positions illustrated in FIG. 1 for the purpose ofillustration, but are not limited to the positions, and the heaterfilters 77 may be arranged in a concentric fashion. Due to such aconfiguration, the heaters 75 are connected to the AC power source 44through the power-feeding-part cover structures 76 and the heaterfilters 77. Thus, a current is supplied from the AC power source 44 tothe heaters 75. Details of a heater feeding mechanism 100 that feedspower to the heaters 75 in this manner are described later. Such aconfiguration makes it possible to divide the stage 12 into zones byusing the plurality of heaters 75 and to independently control thetemperature of each of the zones. By separately controlling thetemperature of each of the zones by using the plurality of heaters 75,the uniformity of the temperature of the wafer W on the stage 12 acrossthe surface of the wafer W can be improved. The temperature control ofthe stage 12 can be performed based on instructions from the controlpart 48. The control part 48 includes a CPU, a ROM and a RAM that arenot illustrated in the drawings, and controls the etching process andthe temperature control process in accordance with a procedure specifiedby a recipe stored in the RAM and the like or data stored in a table.Here, the function of the control part 48 may be implemented byexecuting software or by operating hardware.

A shower head 38 is provided at a ceiling part of the chamber 10 as anupper electrode having a grounded potential. Thus, the high frequencypower from the first high frequency power source 31 is capacitivelysupplied to the stage 12 and the shower head 38.

The shower head 38 at the ceiling part includes an electrode plate 56with many gas discharge holes 56 a and an electrode support 58 thatsupports the electrode plate 56 detachably. A gas supply source 62supplies a gas from a gas introduction port 60 a to the shower head 38through a gas supply pipe 64. The gas is introduced into the chamber 10from many of the gas discharge holes 56 a. Magnets 66 annually orconcentrically extending are disposed around the chamber 10, and controlplasma generated in a plasma generation space between the upperelectrode and the lower electrode by a magnetic force.

An exhaust passage 20 is formed between a side wall of the chamber 10and the support 15. A circular baffle plate 22 is attached to theexhaust passage 20. An exhaust pipe 26 that forms an exhaust port 24 isprovided in a bottom part of the exhaust passage 20, and the exhaustpipe 26 is connected to an exhaust device 28. The exhaust device 28 isformed of a vacuum pump such as a turbo molecular pump or a dry pump,and reduces a pressure of a process space in the chamber 10 to apredetermined degree of vacuum. A gate valve 30 for transfer that opensand closes a transfer opening for the wafer W is attached to the sidewall of the chamber 10.

In the plasma processing apparatus 1 having such a configuration, whenperforming a process such as an etching, to begin with, a wafer W iscarried into the chamber 10 from the opened gate valve 30 while thewafer W is held on a transfer arm that is not illustrated in thedrawings. The wafer W is held by pusher pins that are not illustrated inthe drawings above the electrostatic chuck 40, and is placed on theelectrostatic chuck 40 by causing the pusher pins to move down. The gatevalve 30 is closed after the wafer W is carried into the etchingapparatus 1. The pressure in the chamber 10 is reduced to a settingvalue by the exhaust device 28. A gas is introduced into the chamber 10from the shower head 38 in a shower form.

The high frequency power of predetermined power is supplied the stage12. In addition, the wafer W is electrostatically attracted on theelectrostatic chuck 40 by applying a voltage from the direct voltagesource 42 to the electrode 40 a of the electrostatic chuck 40. Plasma isgenerated by ionizing and dissociating an introduced gas by the highfrequency power, and a process such as an etching is performed on thewafer W by action of plasma.

After the plasma etching ends, the wafer W is carried out of the chamber10 while being held on the transfer arm. By repeating this process, thewafers W are continuously processed by using the plasma. Hereinabove,the overall configuration of the plasma processing apparatus 1 accordingto the present embodiment has been described.

[Heater Power Feeding Mechanism]

Next, the configuration of the heater power feeding mechanism 100according to the present embodiment is described below with reference toFIG. 2. FIG. 2 illustrates an example of the heater power feedingmechanism 100 according to an embodiment. FIG. 2A is a perspective viewof the heater power feeding mechanism 100 as seen from the top side, andFIG. 2B is a perspective view of the heater power feeding mechanism 100as seen from the bottom side.

The heater power feeding mechanism 100 includes an interconnectionstructure 93 including a plurality of sets of heater terminals S1through S8 (which is also collectively referred to as “heater terminalsS”), a plurality of heater interconnections L, and a C-shaped member 93.The plurality of pairs of heater terminals S1 through S8 is made ofconductive member, and is arranged on a top portion of the C-shapedmember 93 a at intervals. The heater interconnections L connect at leastany of the heater terminals S with each other. The C-shaped member 93 ais made of resin, and is provided on the bottom surface of the holdingplate 13.

As illustrated in FIG. 2A, eight sets of the heater terminals S1 throughS8 are arranged on the top surface of the C-shaped member 93 a bysetting two terminals as one set. The top surface of the C-shaped member93 a is a first layer of the interconnection structure 93, in whichdesired heater terminals S are connected with each other by providingthe heater interconnections L in two grooves famed in the top surface.Thus, two or more sets of the heater terminals S among eight sets of theheater terminals S1 through S8 are connected in parallel with each otherby a segment unit in the top surface of the C-shaped member 93 a. InFIG. 2A, the heater terminals S1 through S4 are connected with eachother through the heater interconnections L.

Here, the “segment” means a minimum unit of the heater terminals neededto supply a current to a single heater 75. Moreover, the “zone” means anarea controlled in a same temperature range in controlling thetemperature of the stage 12 by using the plurality of heaters 75.

For example, connecting the heater terminals S1 with the heaterterminals S2 by the segment unit means that one of a set (two) of theheater terminals S1 is connected to one of a set (two) of the heaterterminals S2 and that the other of the set of the heater terminals S1 isconnected to the other of the set of the heater terminals S2. Thus, theheater 75 connected to the set of heater terminals S1 and the heater 75connected to the set of heater terminals S2 are controlled in a sametemperature range within the same zone. In this manner, in the presentembodiment, the zone configuration (the area controlled in a sametemperature range as the same zone) is variably controlled by theinterconnection structure 93.

Eight sets of the heater terminals S1 through S8 are provided by formingtwo heater terminals as one segment according to the present embodiment,but the number of the sets of the heater terminals S is not limited tothis, and any number of the sets of the heater terminals S may beprovided as long as the number is two or more.

FIG. 3A is an A-A section of FIG. 2A, and illustrates a cross section ofthe heater terminals S3 of one segment and its neighborhood. Two of theheater terminals S3 is engaged with jack terminals 103, and is fitted ina fixing case 102 made of an insulating material. The fixing case 102 isfixed to the C-shaped member 93 a by a screw 104. Upper portions of twoof the heater terminals S3 penetrate through the fixing case 102, areexposed above the fixing case 102, and are connected to the heaters 75embedded in the electrostatic chuck (ESC) 40 through the holding plate13.

As illustrated in FIG. 2B, a plurality of sets of power-feeding-partcover 91 is provided on the bottom surface of the C-shaped member 93 aat intervals. The bottom surface of the C-shaped member 93 a is a secondlayer of the interconnection structure 93, and includes the heaterinterconnections 1 in two grooves formed in bottom surface. The heaterinterconnections L connect any end of the heater terminals S penetratingthrough the C-shaped member 93 a arranged on the top surface with any ofthe power-feeding-part covers 91 by the segment unit. Thus, the heaterterminals S1 through S4 are connected to the power-feeding-part cover 91through the heater interconnections L provided in the first layer andthe second layer of the interconnection structure.

In FIG. 2A, although the heater terminals S1 through S4 are connected bythe heater interconnections L, in the connection between the heaterterminals S by the heater interconnections L, at least any of eight setsof the heater terminals S1 through S8 just has to be connected with eachother. Thus, two sets or more of the heater terminals S of eight sets ofthe heater terminals S1 through S8 are connected in parallel with eachother by the segment unit in the top surface of the C-shaped member 93a.

In the interconnection structure 93 according to the present embodiment,a set of heater terminals S is connected to one heater 75 or theplurality of heaters 75. Hence, when the plurality sets of heaterterminals S are connected to each other through the heaterinterconnections L, all of the heaters 75 connected to each otherthrough the plurality sets of heater terminals S constitute the samezone controlled in the same temperature range. In other words, whetheror not the heater interconnections L connect the heater terminals witheach other by the segment unit changes the heaters 75 connected inparallel with each other, and changes the configuration of the same zonecontrolled in the same temperature range. Hence, according to theinterconnection structure 93 of the present embodiment, by connectingeight sets of the heater terminals S1 through S8 with each other throughthe heater interconnections L by the segment unit, the zoneconfiguration of the stage 12 can be variably controlled.

FIG. 3B is a B-B cross section of FIG. 2B, and illustrates a crosssection of two sockets 90 and the power-feeding-part cover members 91,and a part of the heater interconnections L. The power-feeding-partcovers 91 are supported by fixing members 94 on the bottom surface ofthe C-shaped member 93 c. The sockets 90 are made of conductive members,and the power-feeding-part covers 91 are made of insulating members. Thepower-feeding-part covers 91 cover the sockets 90.

FIG. 4 illustrates a detail of the interconnection structure 93 of theheater power feeding mechanism 100 according to the present embodiment.The heater terminals S1 through S4 are connected with each other throughthe heater interconnections L in the first layer illustrated in FIG. 4by utilizing a space under the holding plate 13 of FIG. 1, and theheater terminal S4 is connected to the heater filters 77 through theheater interconnections L in the second layer. FIG. 3B illustrates apart of the heater interconnections L that connect lower end portions S3a of two of the heater terminals S3 with upper end portions 90 a of thesockets 90. Plugs 76 of the heater filters 77 illustrated in FIG. 1 areinserted into the sockets 90.

Thus, the heaters 75 on the side of the heater terminal S (the firstlayer side) are connected to the heater filters 77 on the socket side(the second layer side) through the heater interconnections L, and apower feeding line causing a current from the AC power source 44 to flowto the heaters 75 is formed.

In a planar view of the C-shaped member 93 a illustrated in FIG. 4, theheater interconnections L connect the heater terminals S1 to S2, theheater terminals S2 to S3, and the heater terminals S3 to S4 by thesegment unit.

FIG. 4B is a lateral view of the interconnection structure 93corresponding to the C-shaped member 93 a surrounded by a dashed lineillustrated in FIG. 4A. The interconnection structure 93 is a connectingstructure between the heater terminals S using the heaterinterconnections L in the space under the holding plate 13. Theinterconnection structure 93 may be covered with a case 99.

The interconnection structure 93 is a double structure, and as discussedabove, in the first layer, the heater interconnections L are configuredto connect at least any of the plurality sets of the heater terminals Swith each other by the segment unit. In the example illustrated in FIG.4B, in the first layer, the heater interconnections L connect the heaterterminals S1 through S4 with each other by the segment unit. In thesecond layer, the heater interconnections L connect the heater terminalsS to the filters 77. In the example illustrate in FIG. 4B, in the secondlayer, the heater interconnections L connect the heater terminal S4 tothe heater filters 77 close to the heater terminal S4. Thus, the currentfrom the AC power source 44 is supplied to the plurality of heaters 75connected to the heater terminals S1, S2, S3 and S4, respectively. Thezone whose temperature is controlled by the plurality of heaters 75 (seeFIG. 1) connected in parallel with each other through the heaterinterconnections L forms the same zone. From such a configuration,according to the heater power feeding mechanism 100 of the presentembodiment, by connecting at least any of eight sets of the heaterterminals S1 through S8 with each other by the segment unit, theconfiguration of the zone to be controlled to the same temperature inthe stage 12 can be variably controlled.

Here, in the above embodiment, in the interconnection structure 93, atleast any of eight sets of the heater terminals S provided in theC-shaped member 93 a at intervals are connected with each other by usingthe heater interconnections L. However, the member in which the heaterterminals S are provided is not limited to the C-shaped member 93 a, butmay be a member, for example, formed into a circular shape, a circularshape partially having an opening or a fan-like shape. In this case, thecircular shape may be an ellipse or an exact circle.

[Adjustment of Zone Configuration]

Next, adjustment of the zone configuration according to the presentembodiment is described below with reference to FIG. 5. FIG. 5illustrates an example of the adjustment of the zone configurationaccording to an embodiment. FIG. 5A illustrates an example of the zoneconfiguration when the plasma processing apparatus 1 is the capacitivelycoupled plasma (CCP (Capacitively Coupled Plasma)) apparatus of FIG. 1.FIG. 5B illustrates an example of the zone configuration when the plasmaprocessing apparatus 1 is a CVD (Chemical Vapor Deposition) apparatususing a radial line slot antenna.

The distribution of plasma generated in the chamber 10 changes dependingon the properties of the plasma processing apparatus 1, the processconditions and the like. Hence, in the heater power feeding mechanism100, the zone configuration is adjusted to the distribution of plasma tobe generated, by changing the connection of the heater interconnectionsL in the interconnection structure 93.

For example, in the case of CCP apparatus, the distribution of plasma isuniform inside the stage, and is likely to be non-uniform outside thestage. In this case, the zone configuration (arrangement of each of thezones) is controlled so as to broaden the inside zone and to narrow theoutside zone.

More specifically, as illustrated in FIG. 5 “a-1”, the heaterinterconnections L connect the heater terminals S5 with S6. The heaterfilter 77 b in FIG. 5 “a-3” is connected to the power feeding covers 91shown by circles of “Middle” in FIG. 5 “a-2.” Thus, the heater terminalsS5 and S6 are connected to the heater filter 77 b, and the plurality ofheaters 75 connected to the heater terminals S5 and S6 are controlled inthe same temperature range.

The heater filter 77 c in FIG. 5 “a-3” is connected to thepower-feeding-part covers shown by a circle of “Edge” in FIG. 5 “a-2.”Thus, the heater terminal S7 is connected to the heater filter 77 c.With respect to the heater terminal S8, the heater filter 77 d in FIG. 5“a-3” is connected to the power-feeding-part covers 91 shown by a circleof “Very Edge” (V. Edge) in FIG. 5 “a-2.” Thus, the heater terminal S8is connected to the heater filter 77 d.

In this manner, the very edge (the outermost zone) and the edge zone aremade narrower than the middle zone.

In contrast, as illustrated in FIG. 5 “a-1”, the heater interconnectionsL connect the heater terminals S1 through S4 with each other. The heaterfilter 77 a in FIG. 5 “a-3” is connected to the power-feeding-part covershown by a circle of the center (Center) in FIG. 5 “a-2.” Thus, theplurality of heaters 75 connected to the heater terminals S1 through S4is controlled in the same temperature range.

In this manner, in the case of CCP apparatus of FIG. 5A, the zoneconfiguration can be controlled so as to make the center zone on theinner circumference broad, the edge zone on the outer circumference andthe very edge zone narrow, and the middle zone broader than the edgezone and the very edge zone. Thus, the uniformity of the temperature ofthe stage 12 can be improved. Here, when a heater is arranged at thefocus ring 18, the heater filter 77 e is connected to the heater at thefocus ring (F/R) 18.

In the case of CVD apparatus using the radial line slot antenna of FIG.5B, the distribution of plasma is uniform outside the stage 12, and islikely to be non-uniform inside the stage 12. In this case, the zoneconfiguration is preferred to be variably controlled so as to broadenthe outside zone and to narrow the inside zone.

Accordingly, in this case, as illustrated in FIG. 5 “b-1”, the heaterinterconnections L connect the heater terminals S7 with the S8.Moreover, the heater interconnections L connect the heater terminals S5with S6. Thus, the plurality of heaters 75 connected to the heaterterminals S7 and S8 (corresponding to the very edge zone) are controlledin the same temperature range, and the plurality of heaters 75 connectedto the heater terminals S5 and S6 (corresponding to the edge zone) arecontrolled in the same temperature range.

Furthermore, the heater interconnections L connect the heater terminalsS2 through S4 with each other. Thus, the plurality of heaters 75connected to the heater terminals S2 through S4 (corresponding to themiddle zone) are controlled in the same temperature range. Here, noheater terminal is connected inn parallel with the heater terminal S1,and the heater 75 connected to the heater terminal S1 corresponds to thecenter zone.

In this manner, in the case of CVD apparatus using the radial line slotantenna of FIG. 5B, the zone configuration can be controlled so as tohave a narrow center zone on the inner circumference side and broadzones from the middle zone to the very edge zone. Thus, the uniformityof temperature of the stage 12 can be improved.

Here, because the connection to the heater filters 77 illustrated inFIG. 5 “b-2” and FIG. 5 “b-3” is similar to the connection to the heaterfilters 77 illustrated in FIG. 5 “a-2” and FIG. 5 “a-3”, the descriptionis omitted.

[Method for Controlling Temperature of Stage]

Next, a method for controlling temperature of a stage according to thepresent embodiment is described below with reference to FIGS. 6 and 7.FIG. 6 is a flowchart illustrating an example of the method forcontrolling the temperature of the stage according to an embodiment.FIG. 7 is a table illustrating an example of a zone configuration foreach apparatus according to an embodiment. For example, as described atFIG. 5A, when the plasma processing apparatus 1 is the CCP apparatus,with respect to the heater terminals S connected in parallel with eachother, the table preliminarily specifies that the center zone includesthe heater terminals S1 through S4 and that the middle zone includes theheater terminals S5 and S6. Here, no heater terminal is connected inparallel with the heater terminals S7 of the edge zone and the heaterterminals S8 of the very edge zone.

In FIG. 7, the zone configurations are illustrated by citing an exampleof three plasma processing apparatuses, but in another plasma processingapparatus, a zone configuration depending on the properties of thedistribution of plasma of the apparatus can be determined, and can bestored in the table. Furthermore, the type (properties) of the plasmaprocessing apparatus 1 is an example of conditions in which the wafer isprocessed by using the plasma. Process conditions (a gas type, a gasflow rate, a temperature, a pressure, power of high frequency power andthe like) are cited as other examples of conditions in which the waferis processed by using the plasma. The adjusted zone configurationdepending on the “conditions in which the wafer is subject to the plasmaprocess” cited as these examples are preliminarily stored in the table,and the zone configuration is variably controlled as illustrated in theflowchart of FIG. 6 based on the table. The table is stored in thememory part such as the RAM.

When the process of FIG. 6 is started, the control part 48 determineswhether or not the plasma processing apparatus 1 is being assembled ormaintained (step S10). When the plasma processing apparatus 1 is beingassembled or maintained, the control part 48 determines connectionlocations among the heater terminals S to form a zone configurationdepending on the apparatus (step S12). The control part 48 controls theconnection so as to connect the heater terminals S with each other byusing the heater interconnections L by the segment unit (step S14).

By providing a switch mechanism in the heater interconnections Lconnecting the heater terminals S with each other, the connectionbetween the heater terminals S using the heater interconnections L ispreferably performed automatically by turning on and off the switch.

As discussed above, according to the heater power feeding mechanism 100of the present embodiment, the same stage 12 can be controlled so as tohave different zone configurations by changing the connection of theheater interconnections L in the interconnection structure 93. Forexample, when two heaters 75 connected between the heater terminals Sare arranged in a circumferential direction, according to the presentembodiment, the zone width can be variably controlled in thecircumferential direction by controlling the connection between theheater terminals S. In other words, the zone configuration can becontrolled in the circumferential direction.

In contrast, when two heaters 75 connected between the heater terminalsS are arranged in a radial direction, according to the presentembodiment, the zone width can be variably controlled in the radialdirection by controlling the connection between the heater terminals S.In other words, the zone configuration can be controlled in the radialdirection.

As discussed above, although the description of the embodiments of theheater power feeding mechanism and the method for controlling thetemperature of the stage has been given, the heater power feedingmechanism and the method for controlling the temperature of the stage ofthe present invention is not limited to the above embodiments, butvarious modifications and improvements can be made without departingfrom the scope of the invention. Moreover, the embodiments andmodifications can be combined as long as they are not contradictory toeach other.

For example, the heater power feeding mechanism of the present inventioncan be applied not only to the capacitively coupled plasma (CCP:Capacitively Coupled Plasma) apparatus, but also to other plasmaprocessing apparatuses. The other plasma processing apparatuses may bean inductively coupled plasma (ICP: Inductively Coupled Plasma)apparatus, a CVD (Chemical Vapor Deposition) apparatus using a radialline slot antenna, a helicon wave excited plasma (HWP: Helicon WavePlasma) apparatus, an electron cyclotron resonance plasma (ECR: ElectronCyclotron Resonance Plasma) apparatus and the like.

A substrate to be processed by the plasma processing apparatus of thepresent invention is not limited to the wafer, but for example, may be alarge substrate for a flat panel display, a substrate for an EL(electroluminescence) device or a solar cell.

DESCRIPTION OF THE REFERENCE NUMERALS

-   1 plasma processing apparatus-   10 chamber-   12 stage-   13 holding plate-   28 exhaust device-   38 shower head-   40 electrostatic chuck-   44 AC power source-   75 heater-   77 heater filter-   91 power-feeding-part cover-   93 interconnection mechanism-   93 a C-shaped member-   100 heater power feeding mechanism-   S1-S8 heater terminal-   L heater interconnection

1. A plasma processing apparatus comprising: a plasma processingchamber; a substrate stage disposed in the plasma processing chamber; afirst electrode disposed in the substrate stage; a second electrodedisposed in the substrate stage; and an electrical power feedingassembly disposed below the substrate stage, wherein the electricalpower feeding assembly comprises: a first fixing case having a firstgroup of electrical terminals electrically connectable to the firstelectrode, a second fixing case having a second group of electricalterminals electrically connectable to the second electrode, and anannular member on which the first fixing case and the second fixing caseare disposed apart.
 2. The plasma processing apparatus of claim 1,wherein the annular member further comprises a first wiring layerelectrically connectable to at least one of the first group ofelectrical terminals and the second group of electrical terminals. 3.The plasma processing apparatus of claim 2, wherein the annular memberfurther comprises a second wiring layer electrically connectable to thefirst wiring layer.
 4. The plasma processing apparatus of claim 3,further comprising: at least one RF filter disposed in the plasmaprocessing chamber, wherein the second wiring layer is electricallyconnectable to the at least one RF filter.
 5. The plasma processingapparatus of claim 3, wherein the second wiring layer is disposed belowthe first wiring layer.
 6. The plasma processing apparatus of claim 4,wherein the second wiring layer is disposed below the first wiringlayer.
 7. The plasma processing apparatus of claim 1, wherein each ofthe first group of electrical terminals and the second group ofelectrical terminals has two electrical terminals.
 8. The plasmaprocessing apparatus of claim 2, wherein each of the first group ofelectrical terminals and the second group of electrical terminals hastwo electrical terminals.
 9. The plasma processing apparatus of claim 3,wherein each of the first group of electrical terminals and the secondgroup of electrical terminals has two electrical terminals.
 10. Theplasma processing apparatus of claim 4, wherein each of the first groupof electrical terminals and the second group of electrical terminals hastwo electrical terminals.
 11. The plasma processing apparatus of claim7, wherein the first wiring layer further comprises a first wiredisposed on an inner side of the annular member and a second wiredisposed on an outer side of the annular member, wherein the first wireis electrically connected to a first plurality of terminals disposed onan inner side of the annular member, wherein the first plurality ofterminals comprises an inner side terminal of the first group ofelectrical terminals and an inner side terminal of the second group ofelectrical terminals, and wherein the second wire is electricallyconnected to a second plurality of terminals disposed on an outer sideof the annular member, wherein the second plurality of terminalscomprises an outer side terminal of the first group of electricalterminals and an outer side terminal of the second group of electricalterminals.
 12. The plasma processing apparatus of claim 8, wherein thefirst wiring layer further comprises a first wire disposed on an innerside of the annular member and a second wire disposed on an outer sideof the annular member, wherein the first wire is electrically connectedto a first plurality of terminals disposed on an inner side of theannular member, wherein the first plurality of terminals comprises aninner side terminal of the first group of electrical terminals and aninner side terminal of the second group of electrical terminals, andwherein the second wire is electrically connected to a second pluralityof terminals disposed on an outer side of the annular member, whereinthe second plurality of terminals comprises an outer side terminal ofthe first group of electrical terminals and an outer side terminal ofthe second group of electrical terminals.
 13. The plasma processingapparatus of claim 9, wherein the first wiring layer further comprises afirst wire disposed on an inner side of the annular member and a secondwire disposed on an outer side of the annular member, wherein the firstwire is electrically connected to a first plurality of terminalsdisposed on an inner side of the annular member, wherein the firstplurality of terminals comprises an inner side terminal of the firstgroup of electrical terminals and an inner side terminal of the secondgroup of electrical terminals, and wherein the second wire iselectrically connected to a second plurality of terminals disposed on anouter side of the annular member, wherein the second plurality ofterminals comprises an outer side terminal of the first group ofelectrical terminals and an outer side terminal of the second group ofelectrical terminals.
 14. The plasma processing apparatus of claim 10,wherein the first wiring layer further comprises a first wire disposedon an inner side of the annular member and a second wire disposed on anouter side of the annular member, wherein the first wire is electricallyconnected to a first plurality of terminals disposed on an inner side ofthe annular member, wherein the first plurality of terminals comprisesan inner side terminal of the first group of electrical terminals and aninner side terminal of the second group of electrical terminals, andwherein the second wire is electrically connected to a second pluralityof terminals disposed on an outer side of the annular member, whereinthe second plurality of terminals comprises an outer side terminal ofthe first group of electrical terminals and an outer side terminal ofthe second group of electrical terminals.
 15. A plasma processingapparatus comprising: a plasma processing chamber; a substrate stagedisposed in the plasma processing chamber; a first heater electrode anda second heater electrode disposed in the substrate stage, the firstheater electrode being disposed in different position from the secondheater electrode in planar view; an electrical power feeding assemblydisposed below the substrate stage, the electrical power feedingassembly including: a insulating base; a first insulating case fixed tothe insulating base, the first insulating case having a plurality offirst electrical terminals, the first heater electrode beingelectrically connectable to any one of the plurality of first electricalterminals; and a second insulating case fixed to the insulating base,the second insulating case having a plurality of second electricalterminals, the second heater electrode being electrically connectable toany one of the plurality of second electrical terminals, a first powerfeeding line being formed by electrically connecting one secondelectrical terminal of the plurality of second electrical terminals withone first electrical terminal of the plurality of first electricalterminals, a second power feeding line being formed by electricallyconnecting another second electrical terminal of the plurality of secondelectrical terminals with another first electrical terminal of theplurality of first electrical terminals; and a power source electricallyconnected to the first power feeding line and the second power feedingline.